Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
CD411499C

CD411499C

Powerex, Inc.

DIODE MODULE 1.4KV 100A

0

LD411860

LD411860

Powerex, Inc.

DIODE MODULE 1.8KV 600A POWRBLOK

0

CD611616B

CD611616B

Powerex, Inc.

DIODE MODULE 1.6KV 160A POWRBLOK

7

LD410860

LD410860

Powerex, Inc.

DIODE MODULE 800V 600A POWRBLOK

0

ND411235

ND411235

Powerex, Inc.

DIODE MODULE DUAL

0

ND411626

ND411626

Powerex, Inc.

DIODE MODULE 1.6KV 260A POWRBLOK

0

CD411699C

CD411699C

Powerex, Inc.

DIODE MODULE 1.6KV 100A

253

PD411611

PD411611

Powerex, Inc.

DIODE MODULE 1.6KV 1100A POWRBLK

0

CD611616C

CD611616C

Powerex, Inc.

DIODE MODULE 1.6KV 160A

0

CD411299C

CD411299C

Powerex, Inc.

DIODE MODULE 1.2KV 100A

0

LDR11666

LDR11666

Powerex, Inc.

DIODE MODULE 1.6KV POW-R-BLOK

2

CD412499C

CD412499C

Powerex, Inc.

DIODE MODULE DUAL

95

CD412299C

CD412299C

Powerex, Inc.

DIODE MODULE DUAL

21

LD412260

LD412260

Powerex, Inc.

DIODE MODULE 2.2KV 600A POWRBLOK

0

ND411826

ND411826

Powerex, Inc.

DIODE MODULE 1.8KV 260A POWRBLOK

0

ND411635

ND411635

Powerex, Inc.

DIODE MODULE DUAL

147

LD412060

LD412060

Powerex, Inc.

DIODE MODULE 2KV 600A POW-R-BLOK

0

LD411460

LD411460

Powerex, Inc.

DIODE MODULE 1.4KV 600A POWRBLOK

0

LD411260

LD411260

Powerex, Inc.

DIODE MODULE 1.2KV 600A POWRBLOK

0

CD412099C

CD412099C

Powerex, Inc.

DIODE MODULE DUAL

47

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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