Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
QRD0610T30

QRD0610T30

Powerex, Inc.

DIODE MODULE 600V 33A

0

QRF0630R30

QRF0630R30

Powerex, Inc.

DIODE GEN PURP 600V 210A

0

QRF0610T30

QRF0610T30

Powerex, Inc.

DIODE MODULE 600V 33A

0

QRD0620R30

QRD0620R30

Powerex, Inc.

DIODE GEN PURP 600V 140A

0

CC241250

CC241250

Powerex, Inc.

DIODE MODULE 1.2KV 50A

0

QRC1210T30

QRC1210T30

Powerex, Inc.

DIODE MODULE 1.2KV 53A

0

PN412011

PN412011

Powerex, Inc.

DIODE MODULE COMMON ANODE

0

CDD11210

CDD11210

Powerex, Inc.

DIODE MODULE 1.2KV 100A POWRBLOK

0

CC241210

CC241210

Powerex, Inc.

DIODE MODULE 1.2KV 100A

0

QRC0640R30

QRC0640R30

Powerex, Inc.

DIODE GEN PURP 600V 280A

0

QRD3310002

QRD3310002

Powerex, Inc.

DIODE MODULE 3.3KV 90A

0

CD241250

CD241250

Powerex, Inc.

DIODE MODULE 1.2KV 50A

0

CN241250

CN241250

Powerex, Inc.

DIODE MODULE 1.2KV 50A

0

QRC0630R30

QRC0630R30

Powerex, Inc.

DIODE GEN PURP 600V 210A

0

CD511625

CD511625

Powerex, Inc.

DIODE MODULE 1.6KV 250A POWRBLOK

0

RM300CA-9W

RM300CA-9W

Powerex, Inc.

DIODE MODULE 450V 300A

0

QRC1220T30

QRC1220T30

Powerex, Inc.

DIODE MODULE 1.2KV 99A

0

QRD3310007

QRD3310007

Powerex, Inc.

DIODE MODULE 3.3KV 127A

0

QRC0620T30

QRC0620T30

Powerex, Inc.

DIODE MODULE 600V 70A

0

QRC1430T30

QRC1430T30

Powerex, Inc.

DIODE MODULE 1.4KV 177A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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