Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
PN411211

PN411211

Powerex, Inc.

DIODE MODULE COMMON ANODE

0

QRD6565001

QRD6565001

Powerex, Inc.

DIODE MODULE 6.5KV 650A

0

PN411611

PN411611

Powerex, Inc.

DIODE MODULE COMMON ANODE

0

QRF1230T30

QRF1230T30

Powerex, Inc.

DIODE MODULE 1.2KV 149A

0

CD511225

CD511225

Powerex, Inc.

DIODE MODULE 1.2KV 250A POWRBLOK

0

CD241202

CD241202

Powerex, Inc.

DIODE MODULE 1.2KV 20A

0

QRF0620R30

QRF0620R30

Powerex, Inc.

DIODE GEN PURP 600V 140A

0

PN410611

PN410611

Powerex, Inc.

DIODE MODULE COMMON ANODE

0

QRD1220T30

QRD1220T30

Powerex, Inc.

DIODE MODULE 1.2KV 99A

0

PN414010

PN414010

Powerex, Inc.

DIODE MODULE COMMON ANODE

0

CN240610

CN240610

Powerex, Inc.

DIODE MODULE 600V 100A

0

QRD1210T30

QRD1210T30

Powerex, Inc.

DIODE MODULE 1.2KV 53A

0

QRD1230R30

QRD1230R30

Powerex, Inc.

DIODE GEN PURP 1.2KV 210A

0

QRF1420T30

QRF1420T30

Powerex, Inc.

DIODE MODULE 1.4KV 85A

0

QRC3310001

QRC3310001

Powerex, Inc.

DIODE MODULE 3.3KV 127A

0

QRC0610T30

QRC0610T30

Powerex, Inc.

DIODE MODULE 600V 33A

0

QRF0640R30

QRF0640R30

Powerex, Inc.

DIODE GEN PURP 600V 280A

0

QRD0640R30

QRD0640R30

Powerex, Inc.

DIODE GEN PURP 600V 280A

0

QRD0620T30

QRD0620T30

Powerex, Inc.

DIODE MODULE 600V 70A

0

QRD0630R30

QRD0630R30

Powerex, Inc.

DIODE GEN PURP 600V 210A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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