Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
QRF0640T30

QRF0640T30

Powerex, Inc.

DIODE MODULE 600V 136A

0

QRD1230T30

QRD1230T30

Powerex, Inc.

DIODE MODULE 1.2KV 149A

0

CN2406020N

CN2406020N

Powerex, Inc.

DIODE MODULE 600V 20A

0

CD240602

CD240602

Powerex, Inc.

DIODE MODULE 600V 20A

0

CD510825

CD510825

Powerex, Inc.

DIODE MODULE 800V 250A POWRBLOK

0

QRF1220T30

QRF1220T30

Powerex, Inc.

DIODE MODULE 1.2KV 99A

0

QRF1415T30

QRF1415T30

Powerex, Inc.

DIODE MODULE 1.4KV 59A

0

QRD1210004

QRD1210004

Powerex, Inc.

DIODE MODULE 1.2KV 100A

0

QRD1415T30

QRD1415T30

Powerex, Inc.

DIODE MODULE 1.4KV 59A

0

QRF1220R30

QRF1220R30

Powerex, Inc.

DIODE GEN PURP 1.2KV 140A

0

QRF1210T30

QRF1210T30

Powerex, Inc.

DIODE MODULE 1.2KV 53A

0

PN411811

PN411811

Powerex, Inc.

DIODE MODULE COMMON ANODE

0

QRD1430T30

QRD1430T30

Powerex, Inc.

DIODE MODULE 1.4KV 177A

0

QRSB165001

QRSB165001

Powerex, Inc.

DIODE MODULE 11KV 880A

0

CDD10810

CDD10810

Powerex, Inc.

DIODE MODULE 800V 100A POWRBLOK

0

QRD0630T30

QRD0630T30

Powerex, Inc.

DIODE MODULE 600V 100A

0

QRC0620R30

QRC0620R30

Powerex, Inc.

DIODE GEN PURP 600V 140A

0

PN411411

PN411411

Powerex, Inc.

DIODE MODULE COMMON ANODE

0

QRC3310002

QRC3310002

Powerex, Inc.

DIODE MODULE 3.3KV 90A

0

QRF1230R30

QRF1230R30

Powerex, Inc.

DIODE GEN PURP 1.2KV 210A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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