Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
CD411899C

CD411899C

Powerex, Inc.

DIODE MODULE 1.8KV 100A

0

LD412660

LD412660

Powerex, Inc.

DIODE MODULE DUAL

25

ND411226

ND411226

Powerex, Inc.

DIODE MODULE 1.2KV 260A POWRBLOK

0

ND411735

ND411735

Powerex, Inc.

DIODE MODULE DUAL

0

LD411060

LD411060

Powerex, Inc.

DIODE MODULE 1KV 600A POW-R-BLOK

0

ND411426

ND411426

Powerex, Inc.

DIODE MODULE 1.4KV 260A POWRBLOK

0

CD411099C

CD411099C

Powerex, Inc.

DIODE MODULE 1KV 100A

0

LD411660

LD411660

Powerex, Inc.

DIODE MODULE 1.6KV 600A POWRBLOK

12

ND411435

ND411435

Powerex, Inc.

DIODE MODULE DUAL

0

LDR11866

LDR11866

Powerex, Inc.

DIODE MODULE 1.8KV POW-R-BLOK

14

LD412460

LD412460

Powerex, Inc.

DIODE MODULE 2.4KV 600A POWRBLOK

0

CD412599C

CD412599C

Powerex, Inc.

DIODE MODULE DUAL

0

CD610816B

CD610816B

Powerex, Inc.

DIODE MODULE 800V 160A POWRBLOK

0

CD410899C

CD410899C

Powerex, Inc.

DIODE MODULE 800V 100A

0

PD412611

PD412611

Powerex, Inc.

DIODE MODULE DUAL

0

PD412011

PD412011

Powerex, Inc.

DIODE MODULE 2KV 1100A POWRBLOK

0

CD611416C

CD611416C

Powerex, Inc.

DIODE MODULE 1.4KV 160A

0

ND410635

ND410635

Powerex, Inc.

DIODE MODULE DUAL

0

PD410611

PD410611

Powerex, Inc.

DIODE MODULE 600V 1100A POWRBLOK

0

PD411811

PD411811

Powerex, Inc.

DIODE MODULE 1.8KV 1100A POWRBLK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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