TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MP4KE62A

MP4KE62A

Roving Networks / Microchip Technology

TVS DIODE 53V 85V DO204AL

0

MART100KP100CA

MART100KP100CA

Roving Networks / Microchip Technology

TVS DIODE 100V 197V CASE 5A

0

MSMLJ17CA

MSMLJ17CA

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO214AB

75

MASMLJ90CA

MASMLJ90CA

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO214AB

0

MPLAD15KP54CA

MPLAD15KP54CA

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V PLAD

0

MA5KP85AE3

MA5KP85AE3

Roving Networks / Microchip Technology

TVS DIODE 85V 137V DO204AR

0

MRT100KP58AE3

MRT100KP58AE3

Roving Networks / Microchip Technology

TVS DIODE 58V 114V CASE 5A

0

MXSMBJSAC5.0E3

MXSMBJSAC5.0E3

Roving Networks / Microchip Technology

TVS DIODE 5V 10V DO214AA

0

MPLAD15KP8.0CAE3

MPLAD15KP8.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V PLAD

0

MXLSMCJLCE36A

MXLSMCJLCE36A

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO214AB

0

MSMLJ78CAE3

MSMLJ78CAE3

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO214AB

139

MXLSMCJ110A

MXLSMCJ110A

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

SMBJ16AE3/TR13

SMBJ16AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AA

0

MA1.5KE91AE3

MA1.5KE91AE3

Roving Networks / Microchip Technology

TVS DIODE 77.8V 125V DO204AR

0

SMLJ40CAE3/TR13

SMLJ40CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 40V 64.5V DO214AB

0

JANTXV1N5613

JANTXV1N5613

Roving Networks / Microchip Technology

TVS DIODE 175V 265V G AXIAL

2

MASMLJ6.5AE3

MASMLJ6.5AE3

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO214AB

0

MX15KP240CAE3

MX15KP240CAE3

Roving Networks / Microchip Technology

TVS DIODE 240V 388V CASE 5A

0

M5KP8.5CAE3

M5KP8.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO204AR

0

MASMCJ110CAE3

MASMCJ110CAE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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