TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXSMBG43CA

MXSMBG43CA

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO215AA

0

MSMBG33AE3

MSMBG33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO215AA

0

MXLRT100KP48CAE3

MXLRT100KP48CAE3

Roving Networks / Microchip Technology

TVS DIODE 48V 94.3V CASE 5A

0

MASMBJ170AE3

MASMBJ170AE3

Roving Networks / Microchip Technology

TVS DIODE 170V 275V DO214AA

0

MXSMBJ22CAE3

MXSMBJ22CAE3

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO214AA

0

SMBJ7.0E3/TR13

SMBJ7.0E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 7V 13.3V DO214AA

0

MA5KP78A

MA5KP78A

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO204AR

0

SMDA24-6/TR13

SMDA24-6/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

MXL15KP60CA

MXL15KP60CA

Roving Networks / Microchip Technology

TVS DIODE 60V 97.3V CASE 5A

0

MASMCJ51A

MASMCJ51A

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AB

0

MXSMCJ110CAE3

MXSMCJ110CAE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

MXL5KP5.0A

MXL5KP5.0A

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V CASE 5A

0

USB50805C-AE3/TR13

USB50805C-AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 13V 8SO

0

MASMLJ8.0A

MASMLJ8.0A

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO214AB

0

MXRT100KP100AE3

MXRT100KP100AE3

Roving Networks / Microchip Technology

TVS DIODE 100V 197V CASE 5A

0

SMLJ70CE3/TR13

SMLJ70CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 70V 125V DO214AB

0

MXSMBG75CA

MXSMBG75CA

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO215AA

0

MX15KP64CAE3

MX15KP64CAE3

Roving Networks / Microchip Technology

TVS DIODE 64V 104V CASE 5A

0

MSMCG5.0A

MSMCG5.0A

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V DO215AB

0

M15KP48A

M15KP48A

Roving Networks / Microchip Technology

TVS DIODE 48V 77.7V DO204AR

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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