TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMBJ180E3/TR13

SMBJ180E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 180V DO214AA

0

MSMBG22A

MSMBG22A

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO215AA

0

M5KP45CAE3

M5KP45CAE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO204AR

0

MXLP4KE47A

MXLP4KE47A

Roving Networks / Microchip Technology

TVS DIODE 40.2V 64.8V DO204AL

0

MAP4KE160A

MAP4KE160A

Roving Networks / Microchip Technology

TVS DIODE 136V 219V DO204AL

0

MA1.5KE12AE3

MA1.5KE12AE3

Roving Networks / Microchip Technology

TVS DIODE 10.22V 16.7V DO204AR

0

MSMCG6.0A

MSMCG6.0A

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO215AB

0

MXSMLJ58CA

MXSMLJ58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AB

0

M15KP150CAE3

M15KP150CAE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO204AR

0

USB50824/TR7

USB50824/TR7

Roving Networks / Microchip Technology

TVS DIODE 24V 57V 8SO

0

SMCJ75E3/TR13

SMCJ75E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 75V 134V DO214AB

0

MSMLJ8.0AE3

MSMLJ8.0AE3

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO214AB

0

MP4KE43A

MP4KE43A

Roving Networks / Microchip Technology

TVS DIODE 36.8V 59.3V DO204AL

0

MASMCJLCE33AE3

MASMCJLCE33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AB

0

SMBJ120E3/TR13

SMBJ120E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 120V 214V DO214AA

0

MP4KE220A

MP4KE220A

Roving Networks / Microchip Technology

TVS DIODE 185V 328V DO204AL

0

MA5KP48A

MA5KP48A

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO204AR

0

MSMCG8.5A

MSMCG8.5A

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO215AB

0

MA5KP33A

MA5KP33A

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO204AR

0

MA15KP280CAE3

MA15KP280CAE3

Roving Networks / Microchip Technology

TVS DIODE 280V 452V DO204AR

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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