TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MPLAD15KP10AE3

MPLAD15KP10AE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V PLAD

0

MXL5KP43CA

MXL5KP43CA

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V CASE 5A

0

MSMCJ64AE3

MSMCJ64AE3

Roving Networks / Microchip Technology

TVS DIODE 64V 103V DO214AB

0

MA15KP130CAE3

MA15KP130CAE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO204AR

0

MART100KP70CAE3

MART100KP70CAE3

Roving Networks / Microchip Technology

TVS DIODE 70V 138V CASE 5A

0

MASMBJ30CAE3

MASMBJ30CAE3

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO214AA

0

MAP4KE91AE3

MAP4KE91AE3

Roving Networks / Microchip Technology

TVS DIODE 77.8V 125V DO204AL

0

MSMCG36CA

MSMCG36CA

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO215AB

0

MXP4KE130CAE3

MXP4KE130CAE3

Roving Networks / Microchip Technology

TVS DIODE 111V 179V DO204AL

0

MASMBG33CA

MASMBG33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO215AA

0

SM16LC12E3/TR13

SM16LC12E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 12V 24V 16SOIC

0

1N6136A

1N6136A

Roving Networks / Microchip Technology

TVS DIODE 136.8V 245.7V AXIAL

0

SMLJ26AE3/TR13

SMLJ26AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V DO214AB

0

MXLSMCJ11A

MXLSMCJ11A

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO214AB

0

MXP4KE400CAE3

MXP4KE400CAE3

Roving Networks / Microchip Technology

TVS DIODE 342V 548V DO204AL

0

M5KP78CAE3

M5KP78CAE3

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO204AR

0

MSMBJ8.0A

MSMBJ8.0A

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO214AA

0

MXL5KP51CAE3

MXL5KP51CAE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V CASE 5A

0

UPT17RE3/TR7

UPT17RE3/TR7

Roving Networks / Microchip Technology

TVS DIODE 17V 29.2V POWERMITE 1

0

MX5KP13CA

MX5KP13CA

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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