TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JANTXV1N6151A

JANTXV1N6151A

Roving Networks / Microchip Technology

TVS DIODE 18.2V 33.3V C AXIAL

0

MXLSMCJ6.0CA

MXLSMCJ6.0CA

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AB

0

MASMLJ48AE3

MASMLJ48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AB

0

MASMBJ45CA

MASMBJ45CA

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AA

0

JANTX1N6462

JANTX1N6462

Roving Networks / Microchip Technology

TVS DIODE 6V 11V AXIAL

1

SMCJ22CAE3/TR13

SMCJ22CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO214AB

0

MXLSMCJLCE80A

MXLSMCJLCE80A

Roving Networks / Microchip Technology

TVS DIODE 80V 129V DO214AB

0

MP4KE220AE3

MP4KE220AE3

Roving Networks / Microchip Technology

TVS DIODE 185V 328V DO204AL

0

MXP4KE110A

MXP4KE110A

Roving Networks / Microchip Technology

TVS DIODE 94V 152V DO204AL

0

SMDA15-6E3/TR13

SMDA15-6E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 15V 30V 8SO

0

MA5KP43CA

MA5KP43CA

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO204AR

0

MART100KP90A

MART100KP90A

Roving Networks / Microchip Technology

TVS DIODE 90V 178V CASE 5A

0

MXL5KP28CAE3

MXL5KP28CAE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.5V CASE 5A

0

MXL15KP58CA

MXL15KP58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 94V CASE 5A

0

MXLSMLJ100A

MXLSMLJ100A

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO214AB

0

MA15KP220A

MA15KP220A

Roving Networks / Microchip Technology

TVS DIODE 220V 356V DO204AR

0

MA15KP70AE3

MA15KP70AE3

Roving Networks / Microchip Technology

TVS DIODE 70V 114V DO204AR

0

MX15KP110AE3

MX15KP110AE3

Roving Networks / Microchip Technology

TVS DIODE 110V 178V CASE 5A

0

MXLSMLJ90AE3

MXLSMLJ90AE3

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO214AB

0

1N6041A

1N6041A

Roving Networks / Microchip Technology

TVS DIODE 10V 16.7V DO13

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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