TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCJ12CAE3/TR13

SMCJ12CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO214AB

0

M5KP36CAE3

M5KP36CAE3

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO204AR

0

MXP4KE22AE3

MXP4KE22AE3

Roving Networks / Microchip Technology

TVS DIODE 18.8V 30.6V DO204AL

0

SMAJ6.5AE3/TR13

SMAJ6.5AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO214AC

0

MXLSMBJ110A

MXLSMBJ110A

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AA

0

1N6131AUS

1N6131AUS

Roving Networks / Microchip Technology

TVS DIODE 86.6V 151.3V B SQ-MELF

0

MPLAD15KP64CAE3

MPLAD15KP64CAE3

Roving Networks / Microchip Technology

TVS DIODE 64V 103V PLAD

0

MSMBG14CA

MSMBG14CA

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO215AA

0

MPLAD30KP16CAE3

MPLAD30KP16CAE3

Roving Networks / Microchip Technology

TVS DIODE 16V 27.2V PLAD

0

MPLAD15KP14CA

MPLAD15KP14CA

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V PLAD

0

MPLAD30KP33CA

MPLAD30KP33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V PLAD

0

MSMCG13AE3

MSMCG13AE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO215AB

0

MASMCJ160AE3

MASMCJ160AE3

Roving Networks / Microchip Technology

TVS DIODE 160V 259V DO214AB

0

MXL15KP130CA

MXL15KP130CA

Roving Networks / Microchip Technology

TVS DIODE 130V 209V CASE 5A

0

MSMCJLCE120A

MSMCJLCE120A

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO214AB

0

MASMLJ150CAE3

MASMLJ150CAE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AB

0

M5KP26A

M5KP26A

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V DO204AR

0

MXSMCJ17AE3

MXSMCJ17AE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO214AB

0

MXP4KE47CA

MXP4KE47CA

Roving Networks / Microchip Technology

TVS DIODE 40.2V 64.8V DO204AL

0

MXL5KP17A

MXL5KP17A

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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