TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
M15KP30AE3

M15KP30AE3

Roving Networks / Microchip Technology

TVS DIODE 30V 50.7V DO204AR

0

1N5656AE3

1N5656AE3

Roving Networks / Microchip Technology

TVS DIODE 77.8V 125V DO13

0

MASMBG78CA

MASMBG78CA

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO215AA

0

JAN1N6151A

JAN1N6151A

Roving Networks / Microchip Technology

TVS DIODE 18.2V 33.3V C AXIAL

0

MP4KE200AE3

MP4KE200AE3

Roving Networks / Microchip Technology

TVS DIODE 171V 274V DO204AL

0

MXSMBG130AE3

MXSMBG130AE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO215AA

0

MXP4KE220CA

MXP4KE220CA

Roving Networks / Microchip Technology

TVS DIODE 185V 328V DO204AL

0

MAP4KE12A

MAP4KE12A

Roving Networks / Microchip Technology

TVS DIODE 10.2V 16.7V DO204AL

0

MSMCJ18AE3

MSMCJ18AE3

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO214AB

0

MXLRT100KP180A

MXLRT100KP180A

Roving Networks / Microchip Technology

TVS DIODE 180V 354V CASE 5A

0

MA1.5KE82AE3

MA1.5KE82AE3

Roving Networks / Microchip Technology

TVS DIODE 70.1V 113V DO204AR

0

SMCJ5.0E3/TR13

SMCJ5.0E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 9.6V DO214AB

0

MXLRT100KP48AE3

MXLRT100KP48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 94.3V CASE 5A

0

MSMBJ160CA

MSMBJ160CA

Roving Networks / Microchip Technology

TVS DIODE 160V 259V DO214AA

0

MSMCG6.5A

MSMCG6.5A

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO215AB

0

MXSMLJ48AE3

MXSMLJ48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AB

0

SMAJ54CE3/TR13

SMAJ54CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 54V 96.3V DO214AC

0

MSMBJSAC50

MSMBJSAC50

Roving Networks / Microchip Technology

TVS DIODE 50V 88V DO214AA

0

MXLP4KE110CA

MXLP4KE110CA

Roving Networks / Microchip Technology

TVS DIODE 94V 152V DO204AL

0

MXP4KE170CA

MXP4KE170CA

Roving Networks / Microchip Technology

TVS DIODE 145V 234V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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