TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SM8LC24E3/TR13

SM8LC24E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

SMCJ20CAE3/TR13

SMCJ20CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 20V 32.4V DO214AB

0

MXLSMBJ51CA

MXLSMBJ51CA

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AA

0

MSMBJ10CAE3

MSMBJ10CAE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AA

0

M5KP17A

M5KP17A

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO204AR

165

MSMCJLCE80A

MSMCJLCE80A

Roving Networks / Microchip Technology

TVS DIODE 80V 129V DO214AB

0

MASMCJ100CAE3

MASMCJ100CAE3

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO214AB

0

MXL5KP110AE3

MXL5KP110AE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V CASE 5A

0

MX15KP240AE3

MX15KP240AE3

Roving Networks / Microchip Technology

TVS DIODE 240V 388V CASE 5A

0

MXL15KP28A

MXL15KP28A

Roving Networks / Microchip Technology

TVS DIODE 28V 47.5V CASE 5A

0

MSMBJ64AE3

MSMBJ64AE3

Roving Networks / Microchip Technology

TVS DIODE 64V 103V DO214AA

0

MART100KP160CA

MART100KP160CA

Roving Networks / Microchip Technology

TVS DIODE 160V 315V CASE 5A

0

MA5KP45CA

MA5KP45CA

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO204AR

0

MAP4KE170CA

MAP4KE170CA

Roving Networks / Microchip Technology

TVS DIODE 145V 234V DO204AL

0

MSMBJSAC22

MSMBJSAC22

Roving Networks / Microchip Technology

TVS DIODE 22V 35.4V DO214AA

0

MPLAD30KP48CAE3

MPLAD30KP48CAE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V PLAD

0

MX5KP51AE3

MX5KP51AE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V CASE 5A

0

MX5KP90CAE3

MX5KP90CAE3

Roving Networks / Microchip Technology

TVS DIODE 90V 146V CASE 5A

0

MSMBJ14CA

MSMBJ14CA

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AA

0

MPLAD30KP170AE3

MPLAD30KP170AE3

Roving Networks / Microchip Technology

TVS DIODE 170V 275V PLAD

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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