TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JANTX1N6115US

JANTX1N6115US

Roving Networks / Microchip Technology

TVS DIODE 18.2V 34.97V B SQ-MELF

0

MA1.5KE68CAE3

MA1.5KE68CAE3

Roving Networks / Microchip Technology

TVS DIODE 58.1V 92V DO204AR

0

M5KP45AE3

M5KP45AE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO204AR

47

1N6057A

1N6057A

Roving Networks / Microchip Technology

TVS DIODE 47V 77V DO13

0

MA15KP64AE3

MA15KP64AE3

Roving Networks / Microchip Technology

TVS DIODE 64V 104V DO204AR

0

MAP4KE68AE3

MAP4KE68AE3

Roving Networks / Microchip Technology

TVS DIODE 58.1V 92V DO204AL

0

MSMBG7.0A

MSMBG7.0A

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO215AA

0

SM1605E3/TR13

SM1605E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 11V 16SO

4905

USB50803E3/TR13

USB50803E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 3.3V 11V 8SO

0

MXLSMCJ33CA

MXLSMCJ33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AB

0

MART100KP260CAE3

MART100KP260CAE3

Roving Networks / Microchip Technology

TVS DIODE 260V 512V CASE 5A

0

MPLAD6.5KP33AE3

MPLAD6.5KP33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V PLAD

0

MASMBJ7.5AE3

MASMBJ7.5AE3

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AA

0

MXSMBJSAC12E3

MXSMBJSAC12E3

Roving Networks / Microchip Technology

TVS DIODE 12V 19V DO214AA

0

MXL5KP6.5CAE3

MXL5KP6.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V CASE 5A

0

MSMBG150AE3

MSMBG150AE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO215AA

0

MA1.5KE30CAE3

MA1.5KE30CAE3

Roving Networks / Microchip Technology

TVS DIODE 25.6V 41.4V DO204AR

0

MSMBG6.0CA

MSMBG6.0CA

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO215AA

198

USB50815C-AE3/TR13

USB50815C-AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 15V 32V 8SOIC

0

MSMBG17AE3

MSMBG17AE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO215AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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