TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMDB15E3/TR13

SMDB15E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 15V 24V 8SO

0

MX5KP54AE3

MX5KP54AE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V CASE 5A

0

SMAJ70E3/TR13

SMAJ70E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 70V 125V DO214AC

0

SMBJ250CAE3/TR13

SMBJ250CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 250V DO214AA

0

MA5KP18CAE3

MA5KP18CAE3

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO204AR

0

M15KP260AE3

M15KP260AE3

Roving Networks / Microchip Technology

TVS DIODE 260V 419V DO204AR

0

SMAJ60CAE3/TR13

SMAJ60CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AC

0

M5KP33CA

M5KP33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO204AR

0

MASMBG24A

MASMBG24A

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO215AA

0

MA15KP48A

MA15KP48A

Roving Networks / Microchip Technology

TVS DIODE 48V 77.7V DO204AR

0

MX15KP60CA

MX15KP60CA

Roving Networks / Microchip Technology

TVS DIODE 60V 97.3V CASE 5A

0

MPLAD30KP280CA

MPLAD30KP280CA

Roving Networks / Microchip Technology

TVS DIODE 280V 451V PLAD

0

MSMBJ10AE3

MSMBJ10AE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AA

0

MXP4KE9.1CAE3

MXP4KE9.1CAE3

Roving Networks / Microchip Technology

TVS DIODE 7.78V 13.4V DO204AL

0

MA5KP36CA

MA5KP36CA

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO204AR

0

MSMLJ120AE3

MSMLJ120AE3

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO214AB

0

MASMLJ8.5CAE3

MASMLJ8.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO214AB

0

MXLSMBG17CAE3

MXLSMBG17CAE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO215AA

0

MASMBJ90AE3

MASMBJ90AE3

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO214AA

0

MA15KP75CAE3

MA15KP75CAE3

Roving Networks / Microchip Technology

TVS DIODE 75V 122V DO204AR

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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