TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MP4KE33CAE3

MP4KE33CAE3

Roving Networks / Microchip Technology

TVS DIODE 28.2V 45.7V DO204AL

0

MA1.5KE62CAE3

MA1.5KE62CAE3

Roving Networks / Microchip Technology

TVS DIODE 53V 85V DO204AR

0

MASMLJ10A

MASMLJ10A

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AB

0

MXP4KE15AE3

MXP4KE15AE3

Roving Networks / Microchip Technology

TVS DIODE 12.8V 21.2V DO204AL

0

JANTXV1N6114AUS

JANTXV1N6114AUS

Roving Networks / Microchip Technology

TVS DIODE 16.7V 30.5V B SQ-MELF

0

SMBJ51CE3/TR13

SMBJ51CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 51V 91.1V DO214AA

0

MA5KP6.5CA

MA5KP6.5CA

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO204AR

0

SMDB05CE3/TR7

SMDB05CE3/TR7

Roving Networks / Microchip Technology

TVS DIODE 5V 11V 8SO

0

MSMLJ17AE3

MSMLJ17AE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO214AB

0

MXSMBJ100CA

MXSMBJ100CA

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO214AA

0

MASMCJ18AE3

MASMCJ18AE3

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO214AB

0

MXSMCJ90AE3

MXSMCJ90AE3

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO214AB

0

MSMBG58AE3

MSMBG58AE3

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO215AA

0

MX5KP22A

MX5KP22A

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V CASE 5A

0

MXLSMBJSAC75E3

MXLSMBJSAC75E3

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AA

0

MXSMBJ150CA

MXSMBJ150CA

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AA

0

MXLSMBJ36A

MXLSMBJ36A

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO214AA

0

MXP4KE68AE3

MXP4KE68AE3

Roving Networks / Microchip Technology

TVS DIODE 58.1V 92V DO204AL

0

MSMBG45CA

MSMBG45CA

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO215AA

0

MSMCJ28A

MSMCJ28A

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

5

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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