TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MP4KE12CA

MP4KE12CA

Roving Networks / Microchip Technology

TVS DIODE 10.2V 16.7V DO204AL

0

MA5KP11CAE3

MA5KP11CAE3

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO204AR

0

MXLSMBG6.0CAE3

MXLSMBG6.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO215AA

0

MA5KP70AE3

MA5KP70AE3

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO204AR

0

MXSMLJ43A

MXSMLJ43A

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AB

0

MXSMLJ10AE3

MXSMLJ10AE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AB

0

MXL5KP85CAE3

MXL5KP85CAE3

Roving Networks / Microchip Technology

TVS DIODE 85V 137V CASE 5A

0

MPLAD30KP90CA

MPLAD30KP90CA

Roving Networks / Microchip Technology

TVS DIODE 90V 146V PLAD

0

MASMBJSAC50

MASMBJSAC50

Roving Networks / Microchip Technology

TVS DIODE 50V 88V DO214AA

0

MSMBG130AE3

MSMBG130AE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO215AA

0

MASMBG64CA

MASMBG64CA

Roving Networks / Microchip Technology

TVS DIODE 64V 103V DO215AA

0

MAP4KE20CA

MAP4KE20CA

Roving Networks / Microchip Technology

TVS DIODE 17.1V 27.7V DO204AL

0

MXLSMLJ48CA

MXLSMLJ48CA

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AB

0

MX5KP5.0CAE3

MX5KP5.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V CASE 5A

0

MPLAD6.5KP43A

MPLAD6.5KP43A

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V PLAD

0

MXSMLJ110A

MXSMLJ110A

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

MXLSMBJ120A

MXLSMBJ120A

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO214AA

0

MSMLJ28AE3

MSMLJ28AE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

0

MPLAD30KP36CA

MPLAD30KP36CA

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V PLAD

0

MASMLJ43AE3

MASMLJ43AE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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