TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXLSMBG9.0CAE3

MXLSMBG9.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO215AA

0

JANTX1N6155A

JANTX1N6155A

Roving Networks / Microchip Technology

TVS DIODE 27.4V 49.9V C AXIAL

0

MSMCJLCE10A

MSMCJLCE10A

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AB

0

MXLSMBJ6.5CA

MXLSMBJ6.5CA

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO214AA

0

MXSMBG24CAE3

MXSMBG24CAE3

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO215AA

0

MXLSMBJSAC5.0E3

MXLSMBJSAC5.0E3

Roving Networks / Microchip Technology

TVS DIODE 5V 10V DO214AA

0

UPT33/TR7

UPT33/TR7

Roving Networks / Microchip Technology

TVS DIODE 33V 56.7V POWERMITE 1

0

1N6126AUS

1N6126AUS

Roving Networks / Microchip Technology

TVS DIODE 51.7V 97.1V B SQ-MELF

0

MSMCG150A

MSMCG150A

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO215AB

170

MSMLJ18A

MSMLJ18A

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO214AB

0

MASMBG170A

MASMBG170A

Roving Networks / Microchip Technology

TVS DIODE 170V 275V DO215AA

0

SMCJ180CAE3/TR13

SMCJ180CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 180V DO214AB

0

MX15KP43A

MX15KP43A

Roving Networks / Microchip Technology

TVS DIODE 43V 69.7V CASE 5A

0

MA5KP22CA

MA5KP22CA

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO204AR

0

SMBJ54AE3/TR13

SMBJ54AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AA

0

MASMCJ43CAE3

MASMCJ43CAE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO214AB

0

MP4KE12CAE3

MP4KE12CAE3

Roving Networks / Microchip Technology

TVS DIODE 10.2V 16.7V DO204AL

0

SMCJ60CAE3/TR13

SMCJ60CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

MASMBG14AE3

MASMBG14AE3

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO215AA

0

MP4KE12AE3

MP4KE12AE3

Roving Networks / Microchip Technology

TVS DIODE 10.2V 16.7V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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