TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MSMBJ54CA

MSMBJ54CA

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AA

0

MASMBJ51A

MASMBJ51A

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AA

0

MXLSMLJ6.0CA

MXLSMLJ6.0CA

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AB

0

MASMBG26A

MASMBG26A

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V DO215AA

0

MXSMBG48CAE3

MXSMBG48CAE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO215AA

0

MXP4KE39A

MXP4KE39A

Roving Networks / Microchip Technology

TVS DIODE 33.3V 53.9V DO204AL

0

SM1603CE3/TR13

SM1603CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 3.3V 9V 16SO

0

MXLSMCJLCE54AE3

MXLSMCJLCE54AE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AB

0

MSMCJLCE51AE3

MSMCJLCE51AE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AB

0

SMAJ48AE3/TR13

SMAJ48AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AC

0

USBQ50415E3/TR7

USBQ50415E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 15V 32V QFN-143

0

MXSMLJ150AE3

MXSMLJ150AE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AB

0

SMDA24C-4-2E3/TR7

SMDA24C-4-2E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

MXLSMBJ7.5CAE3

MXLSMBJ7.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AA

0

MXLP4KE200A

MXLP4KE200A

Roving Networks / Microchip Technology

TVS DIODE 171V 274V DO204AL

0

MSMBJ70A

MSMBJ70A

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO214AA

0

MXSMCJ8.0CA

MXSMCJ8.0CA

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO214AB

0

MASMBJ14A

MASMBJ14A

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AA

0

SMDB05CE3/TR13

SMDB05CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 11V 8SO

0

JANTX1N6157A

JANTX1N6157A

Roving Networks / Microchip Technology

TVS DIODE 32.7V 59.1V C AXIAL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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