TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCJ7.5E3/TR13

SMCJ7.5E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 7.5V 14.3V DO214AB

0

MXSMBJ16A

MXSMBJ16A

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AA

0

MASMCJ13CA

MASMCJ13CA

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO214AB

0

M5KP13AE3

M5KP13AE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO204AR

0

SMLJ90CAE3/TR13

SMLJ90CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO214AB

0

MX5KP13CAE3

MX5KP13CAE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V CASE 5A

0

MSMCJ7.5CAE3

MSMCJ7.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AB

0

MA1.5KE220CA

MA1.5KE220CA

Roving Networks / Microchip Technology

TVS DIODE 185V 328V DO204AR

0

MSMBJ60CA

MSMBJ60CA

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AA

45

MXSMLJ24AE3

MXSMLJ24AE3

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO214AB

0

MXLSMBJ54CA

MXLSMBJ54CA

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AA

0

MXLSMLJ7.0CA

MXLSMLJ7.0CA

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO214AB

0

MASMBJSAC18

MASMBJSAC18

Roving Networks / Microchip Technology

TVS DIODE 18V 28.8V DO214AA

0

MPLAD15KP200CA

MPLAD15KP200CA

Roving Networks / Microchip Technology

TVS DIODE 200V 322V PLAD

0

SMBJ150E3/TR13

SMBJ150E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 150V 268V DO214AA

0

MXSMBG6.5CAE3

MXSMBG6.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO215AA

0

MXLSMCJ28A

MXLSMCJ28A

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

0

MPLAD15KP18CA

MPLAD15KP18CA

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V PLAD

0

MSMCG22A

MSMCG22A

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO215AB

0

MASMBG60CA

MASMBG60CA

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO215AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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