TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MASMLJ7.0AE3

MASMLJ7.0AE3

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO214AB

0

MXL15KP130A

MXL15KP130A

Roving Networks / Microchip Technology

TVS DIODE 130V 209V CASE 5A

0

MAP4KE8.2AE3

MAP4KE8.2AE3

Roving Networks / Microchip Technology

TVS DIODE 7.02V 12.1V DO204AL

0

MSMCG170A

MSMCG170A

Roving Networks / Microchip Technology

TVS DIODE 170V 275V DO215AB

200

MXL5KP43CAE3

MXL5KP43CAE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V CASE 5A

0

MA5KP5.0A

MA5KP5.0A

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V DO204AR

0

MPLAD15KP110CAE3

MPLAD15KP110CAE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V PLAD

0

MAP4KE11AE3

MAP4KE11AE3

Roving Networks / Microchip Technology

TVS DIODE 9.4V 15.6V DO204AL

0

MSMBG15CAE3

MSMBG15CAE3

Roving Networks / Microchip Technology

TVS DIODE 15V 24.4V DO215AA

0

UPT12/TR7

UPT12/TR7

Roving Networks / Microchip Technology

TVS DIODE 12V 21.6V POWERMITE 1

0

MRT100KP48CA

MRT100KP48CA

Roving Networks / Microchip Technology

TVS DIODE 48V 94.3V CASE 5A

0

MART100KP250CAE3

MART100KP250CAE3

Roving Networks / Microchip Technology

TVS DIODE 250V 493V CASE 5A

0

SMBJ14AE3/TR13

SMBJ14AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AA

0

SMBJ6.0E3/TR13

SMBJ6.0E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 6V 11.4V DO214AA

0

SMBJ14CE3/TR13

SMBJ14CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 14V 25.8V DO214AA

0

MPLAD15KP150CAE3

MPLAD15KP150CAE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V PLAD

0

SMLJ8.0CAE3/TR13

SMLJ8.0CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO214AB

0

MX5KP48A

MX5KP48A

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V CASE 5A

0

MSMBJ33AE3

MSMBJ33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AA

0

MXRT100KP64CAE3

MXRT100KP64CAE3

Roving Networks / Microchip Technology

TVS DIODE 64V 126V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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