TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MX5KP6.5A

MX5KP6.5A

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V CASE 5A

0

MXLSMBG90A

MXLSMBG90A

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO215AA

0

SM16LC08CE3/TR13

SM16LC08CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 8V 13.4V 16SO

0

MXSMBJ6.0CA

MXSMBJ6.0CA

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AA

0

MXLSMCJLCE64AE3

MXLSMCJLCE64AE3

Roving Networks / Microchip Technology

TVS DIODE 64V 103V DO214AB

0

MXSMBG10CAE3

MXSMBG10CAE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO215AA

0

MXLSMCJLCE60AE3

MXLSMCJLCE60AE3

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

MSMBG22AE3

MSMBG22AE3

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO215AA

0

MXL5KP16CAE3

MXL5KP16CAE3

Roving Networks / Microchip Technology

TVS DIODE 16V 26V CASE 5A

0

MPLAD15KP48A

MPLAD15KP48A

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V PLAD

0

1N6108US

1N6108US

Roving Networks / Microchip Technology

TVS DIODE 9.1V 17.75V B SQ-MELF

0

MXLSMCJLCE150A

MXLSMCJLCE150A

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AB

0

SMDB03/TR13

SMDB03/TR13

Roving Networks / Microchip Technology

TVS DIODE 3.3V 9V 8SO

0

MASMLJ24CA

MASMLJ24CA

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO214AB

0

MXLSMLJ54AE3

MXLSMLJ54AE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AB

0

MXLSMLJ6.5CAE3

MXLSMLJ6.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 6.5V 11.2V DO214AB

0

MXLSMCJ75AE3

MXLSMCJ75AE3

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AB

0

MSMBG78CA

MSMBG78CA

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO215AA

0

MPLAD30KP60CAE3

MPLAD30KP60CAE3

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V PLAD

0

MA1.5KE170CAE3

MA1.5KE170CAE3

Roving Networks / Microchip Technology

TVS DIODE 145V 234V DO204AR

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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