TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MA1.5KE110CA

MA1.5KE110CA

Roving Networks / Microchip Technology

TVS DIODE 94V 152V DO204AR

0

MXSMCJLCE70AE3

MXSMCJLCE70AE3

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO214AB

0

UPT8RE3/TR13

UPT8RE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 8V 13.7V POWERMITE 1

0

MXLSMBJ17AE3

MXLSMBJ17AE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO214AA

0

MSMLG130CAE3

MSMLG130CAE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO215AB

0

USB50824C-AE3/TR7

USB50824C-AE3/TR7

Roving Networks / Microchip Technology

TVS DIODE 24V 57V 8SO

0

MASMCJ45A

MASMCJ45A

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

MXSMCJLCE7.5AE3

MXSMCJLCE7.5AE3

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AB

0

MAP4KE200AE3

MAP4KE200AE3

Roving Networks / Microchip Technology

TVS DIODE 171V 274V DO204AL

0

MA1.5KE24AE3

MA1.5KE24AE3

Roving Networks / Microchip Technology

TVS DIODE 20.5V 33.2V DO204AR

0

MASMLJ28CA

MASMLJ28CA

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

0

SMCJ100E3/TR13

SMCJ100E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 100V 179V DO214AB

0

MXSMBG28AE3

MXSMBG28AE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO215AA

0

MXL15KP45A

MXL15KP45A

Roving Networks / Microchip Technology

TVS DIODE 45V 73V CASE 5A

0

MP4KE300AE3

MP4KE300AE3

Roving Networks / Microchip Technology

TVS DIODE 256V 414V DO204AL

0

MXLSMBJ5.0CAE3

MXLSMBJ5.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V DO214AA

0

MXL5KP28A

MXL5KP28A

Roving Networks / Microchip Technology

TVS DIODE 28V 45.5V CASE 5A

0

MSMCJ9.0CAE3

MSMCJ9.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO214AB

0

MX5KP40CA

MX5KP40CA

Roving Networks / Microchip Technology

TVS DIODE 40V 64.5V CASE 5A

0

MAP4KE24CA

MAP4KE24CA

Roving Networks / Microchip Technology

TVS DIODE 20.5V 33.2V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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