TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MSMCG15AE3

MSMCG15AE3

Roving Networks / Microchip Technology

TVS DIODE 15V 24.4V DO215AB

0

MXLSMBJ85CAE3

MXLSMBJ85CAE3

Roving Networks / Microchip Technology

TVS DIODE 85V 137V DO214AA

0

MSMCJ28CAE3

MSMCJ28CAE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

0

JANTXV1N6474

JANTXV1N6474

Roving Networks / Microchip Technology

TVS DIODE 30.5V 47.5V AXIAL

0

MRT100KP300CA

MRT100KP300CA

Roving Networks / Microchip Technology

TVS DIODE 300V 590V CASE 5A

0

MXSMCJLCE16A

MXSMCJLCE16A

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AB

0

MRT100KP90AE3

MRT100KP90AE3

Roving Networks / Microchip Technology

TVS DIODE 90V 178V CASE 5A

0

MXL15KP160CAE3

MXL15KP160CAE3

Roving Networks / Microchip Technology

TVS DIODE 160V 259V CASE 5A

0

SMLJ60AE3/TR13

SMLJ60AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

MA1.5KE6.8A

MA1.5KE6.8A

Roving Networks / Microchip Technology

TVS DIODE 5.8V 10.5V DO204AR

0

SMBJ43CE3/TR13

SMBJ43CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 43V 76.7V DO214AA

0

MA5KP18A

MA5KP18A

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO204AR

0

MASMBJ7.5CA

MASMBJ7.5CA

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AA

0

MP4KE200A

MP4KE200A

Roving Networks / Microchip Technology

TVS DIODE 171V 274V DO204AL

0

MART100KP90AE3

MART100KP90AE3

Roving Networks / Microchip Technology

TVS DIODE 90V 178V CASE 5A

0

M15KP240CA

M15KP240CA

Roving Networks / Microchip Technology

TVS DIODE 240V 388V DO204AR

0

MXP4KE180CA

MXP4KE180CA

Roving Networks / Microchip Technology

TVS DIODE 154V 246V DO204AL

0

MA5KP33CAE3

MA5KP33CAE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO204AR

0

SMDA12-6E3/TR13

SMDA12-6E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 12V 24V 8SO

0

MXSMLJ9.0CAE3

MXSMLJ9.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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