TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MPLAD15KP75CAE3

MPLAD15KP75CAE3

Roving Networks / Microchip Technology

TVS DIODE 75V 121V PLAD

175

MPLAD15KP12A

MPLAD15KP12A

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V PLAD

0

MX15KP260CAE3

MX15KP260CAE3

Roving Networks / Microchip Technology

TVS DIODE 260V 419V CASE 5A

0

1N6466

1N6466

Roving Networks / Microchip Technology

TVS DIODE 30.5V 47.5V AXIAL

0

MP4KE110A

MP4KE110A

Roving Networks / Microchip Technology

TVS DIODE 94V 152V DO204AL

0

MA1.5KE16AE3

MA1.5KE16AE3

Roving Networks / Microchip Technology

TVS DIODE 13.6V 22.5V DO204AR

0

MSMLJ150A

MSMLJ150A

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AB

0

MASMBG13AE3

MASMBG13AE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO215AA

0

MASMCJLCE48AE3

MASMCJLCE48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AB

0

MXP4KE160CAE3

MXP4KE160CAE3

Roving Networks / Microchip Technology

TVS DIODE 136V 219V DO204AL

0

MASMBJ7.5CAE3

MASMBJ7.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AA

0

MART100KP160CAE3

MART100KP160CAE3

Roving Networks / Microchip Technology

TVS DIODE 160V 315V CASE 5A

0

M15KP240CAE3

M15KP240CAE3

Roving Networks / Microchip Technology

TVS DIODE 240V 388V DO204AR

0

M15KP43AE3

M15KP43AE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.7V DO204AR

0

USB50812C-A/TR7

USB50812C-A/TR7

Roving Networks / Microchip Technology

TVS DIODE 12V 26V 8SO

0

JANTXV1N6116AUS

JANTXV1N6116AUS

Roving Networks / Microchip Technology

TVS DIODE 20.6V 37.4V B SQ-MELF

0

MXLSMBJSAC36

MXLSMBJSAC36

Roving Networks / Microchip Technology

TVS DIODE 36V 60V DO214AA

0

JANTX1N6473

JANTX1N6473

Roving Networks / Microchip Technology

TVS DIODE 24V 41.4V AXIAL

0

MASMCJ45AE3

MASMCJ45AE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

MXLRT100KP58A

MXLRT100KP58A

Roving Networks / Microchip Technology

TVS DIODE 58V 114V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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