TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXL5KP60A

MXL5KP60A

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V CASE 5A

0

SMLJ36CE3/TR13

SMLJ36CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 36V 64.3V DO214AB

0

MXLSMBJ8.5A

MXLSMBJ8.5A

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO214AA

0

JANTXV1N6110AUS

JANTXV1N6110AUS

Roving Networks / Microchip Technology

TVS DIODE 11.4V 21V B SQ-MELF

0

MXL5KP16CA

MXL5KP16CA

Roving Networks / Microchip Technology

TVS DIODE 16V 26V CASE 5A

0

MXLSMCJ36A

MXLSMCJ36A

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO214AB

0

M5KP8.5A

M5KP8.5A

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO204AR

0

MP4KE150A

MP4KE150A

Roving Networks / Microchip Technology

TVS DIODE 128V 207V DO204AL

0

M15KP30CAE3

M15KP30CAE3

Roving Networks / Microchip Technology

TVS DIODE 30V 50.7V DO204AR

0

MAP4KE400AE3

MAP4KE400AE3

Roving Networks / Microchip Technology

TVS DIODE 342V 548V DO204AL

0

MASMCJLCE30A

MASMCJLCE30A

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO214AB

0

MSMBG78AE3

MSMBG78AE3

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO215AA

0

MXSMCJ14CA

MXSMCJ14CA

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AB

0

SMDA24C-5/TR13

SMDA24C-5/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

MXLRT100KP85AE3

MXLRT100KP85AE3

Roving Networks / Microchip Technology

TVS DIODE 85V 166V CASE 5A

0

MSMBJ16CA

MSMBJ16CA

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AA

0

MXP4KE10AE3

MXP4KE10AE3

Roving Networks / Microchip Technology

TVS DIODE 8.55V 14.5V DO204AL

0

USB50803C/TR7

USB50803C/TR7

Roving Networks / Microchip Technology

TVS DIODE 3.3V 11V 8SO

66

SMDA05CE3/TR7

SMDA05CE3/TR7

Roving Networks / Microchip Technology

TVS DIODE 5V 11V 8SO

0

SMLJ24E3/TR13

SMLJ24E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 43V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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