TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MRT100KP75CAE3

MRT100KP75CAE3

Roving Networks / Microchip Technology

TVS DIODE 75V 147V CASE 5A

0

SMCJ7.5CAE3/TR13

SMCJ7.5CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AB

0

MXRT100KP64AE3

MXRT100KP64AE3

Roving Networks / Microchip Technology

TVS DIODE 64V 126V CASE 5A

0

MXSMLJ10CAE3

MXSMLJ10CAE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AB

0

MP4KE350CAE3

MP4KE350CAE3

Roving Networks / Microchip Technology

TVS DIODE 300V 482V DO204AL

0

MXL5KP11CA

MXL5KP11CA

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V CASE 5A

0

MXL15KP36AE3

MXL15KP36AE3

Roving Networks / Microchip Technology

TVS DIODE 36V 59.7V CASE 5A

0

MXLSMCJ16AE3

MXLSMCJ16AE3

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AB

0

MSMCJ45A

MSMCJ45A

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

MA5KP22CAE3

MA5KP22CAE3

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO204AR

0

MPLAD15KP170CAE3

MPLAD15KP170CAE3

Roving Networks / Microchip Technology

TVS DIODE 170V 275V PLAD

0

MXSMBJ54AE3

MXSMBJ54AE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AA

0

MASMBJ40AE3

MASMBJ40AE3

Roving Networks / Microchip Technology

TVS DIODE 40V 64.5V DO214AA

0

MXLP4KE30CA

MXLP4KE30CA

Roving Networks / Microchip Technology

TVS DIODE 25.6V 41.4V DO204AL

0

SMBJ200CE3/TR13

SMBJ200CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 200V DO214AA

0

MXSMBG13CA

MXSMBG13CA

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO215AA

0

MASMLJ16AE3

MASMLJ16AE3

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AB

0

MASMLJ75CA

MASMLJ75CA

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AB

0

MRT100KP400AE3

MRT100KP400AE3

Roving Networks / Microchip Technology

TVS DIODE 400V 787V CASE 5A

0

MSMCG7.0CAE3

MSMCG7.0CAE3

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO215AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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