TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MSMBJ6.0CA

MSMBJ6.0CA

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AA

125

MXLSMBJ54AE3

MXLSMBJ54AE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AA

0

MXLSMLJ48AE3

MXLSMLJ48AE3

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AB

0

MSMBJ30AE3

MSMBJ30AE3

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO214AA

0

MSMBJ5.0A

MSMBJ5.0A

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V DO214AA

0

MXSMBJ24AE3

MXSMBJ24AE3

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO214AA

0

USB50815C/TR13

USB50815C/TR13

Roving Networks / Microchip Technology

TVS DIODE 15V 32V 8SOIC

0

MXSMCJLCE80AE3

MXSMCJLCE80AE3

Roving Networks / Microchip Technology

TVS DIODE 80V 129V DO214AB

0

MXLP4KE18CA

MXLP4KE18CA

Roving Networks / Microchip Technology

TVS DIODE 15.3V 25.2V DO204AL

0

1N6132AUS

1N6132AUS

Roving Networks / Microchip Technology

TVS DIODE 91.2V 165.1V B SQ-MELF

0

MXL5KP110CAE3

MXL5KP110CAE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V CASE 5A

0

MXSMCJ51CA

MXSMCJ51CA

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO214AB

0

MXLSMCJ150CAE3

MXLSMCJ150CAE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AB

0

MXSMCJ150CA

MXSMCJ150CA

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AB

0

MASMBG22CAE3

MASMBG22CAE3

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO215AA

0

JANTXV1N6103US

JANTXV1N6103US

Roving Networks / Microchip Technology

TVS DIODE 5.7V 11.76V B SQ-MELF

0

MASMLJ70CAE3

MASMLJ70CAE3

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO214AB

0

MA5KP28CAE3

MA5KP28CAE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.5V DO204AR

0

M15KP28A

M15KP28A

Roving Networks / Microchip Technology

TVS DIODE 28V 47.5V DO204AR

0

MXSMCJ110A

MXSMCJ110A

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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