TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MART100KP130AE3

MART100KP130AE3

Roving Networks / Microchip Technology

TVS DIODE 130V 254V CASE 5A

0

MSMBG5.0AE3

MSMBG5.0AE3

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V DO215AA

0

MP4KE160CA

MP4KE160CA

Roving Networks / Microchip Technology

TVS DIODE 136V 219V DO204AL

0

MSMCJ30CA

MSMCJ30CA

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO214AB

0

MART100KP160AE3

MART100KP160AE3

Roving Networks / Microchip Technology

TVS DIODE 160V 315V CASE 5A

0

MXP4KE170A

MXP4KE170A

Roving Networks / Microchip Technology

TVS DIODE 145V 234V DO204AL

0

MA1.5KE39AE3

MA1.5KE39AE3

Roving Networks / Microchip Technology

TVS DIODE 33.3V 53.9V DO204AR

0

SM1624E3/TR13

SM1624E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 16SO

0

SMDA03-6/TR7

SMDA03-6/TR7

Roving Networks / Microchip Technology

TVS DIODE 3.3V 9V 8SO

0

MPLAD15KP17AE3

MPLAD15KP17AE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V PLAD

0

M15KP70A

M15KP70A

Roving Networks / Microchip Technology

TVS DIODE 70V 114V DO204AR

0

MXLSMCJLCE7.0A

MXLSMCJLCE7.0A

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO214AB

0

MXLRT100KP280CAE3

MXLRT100KP280CAE3

Roving Networks / Microchip Technology

TVS DIODE 280V 552V CASE 5A

0

MASMCJLCE60A

MASMCJLCE60A

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

MSMBJSAC5.0

MSMBJSAC5.0

Roving Networks / Microchip Technology

TVS DIODE 5V 10V DO214AA

0

MPLAD15KP11AE3

MPLAD15KP11AE3

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V PLAD

0

SMCJ75CAE3/TR13

SMCJ75CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AB

0

MXLSMBG43CAE3

MXLSMBG43CAE3

Roving Networks / Microchip Technology

TVS DIODE 43V 69.4V DO215AA

0

MX15KP70CA

MX15KP70CA

Roving Networks / Microchip Technology

TVS DIODE 70V 114V CASE 5A

0

MXLRT100KP130A

MXLRT100KP130A

Roving Networks / Microchip Technology

TVS DIODE 130V 254V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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