TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MPLAD30KP17CA

MPLAD30KP17CA

Roving Networks / Microchip Technology

TVS DIODE 17V 28.8V PLAD

0

MSMCGLCE18AE3

MSMCGLCE18AE3

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO215AB

0

MASMCJLCE75A

MASMCJLCE75A

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AB

0

MXSMCJ110AE3

MXSMCJ110AE3

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AB

0

MASMBJ60A

MASMBJ60A

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AA

0

MASMBJ150A

MASMBJ150A

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AA

0

MPLAD15KP26CAE3

MPLAD15KP26CAE3

Roving Networks / Microchip Technology

TVS DIODE 26V 42.1V PLAD

0

1N6103US

1N6103US

Roving Networks / Microchip Technology

TVS DIODE 5.7V 11.76V B SQ-MELF

0

MSMLG100CAE3

MSMLG100CAE3

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO215AB

0

MXSMBG6.0CA

MXSMBG6.0CA

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO215AA

0

MSMCJ33CAE3

MSMCJ33CAE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AB

0

MA15KP58CA

MA15KP58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 94V DO204AR

0

MART100KP45CA

MART100KP45CA

Roving Networks / Microchip Technology

TVS DIODE 45V 88.5V CASE 5A

0

MASMBJ90CAE3

MASMBJ90CAE3

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO214AA

0

SMAJ120CE3/TR13

SMAJ120CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 120V 214V DO214AC

0

MXLSMBJ18CAE3

MXLSMBJ18CAE3

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO214AA

0

MXLSMBG17CA

MXLSMBG17CA

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO215AA

0

SMCJ14CAE3/TR13

SMCJ14CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AB

0

SMAJ12AE3/TR13

SMAJ12AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO214AC

0

MPLAD30KP24A

MPLAD30KP24A

Roving Networks / Microchip Technology

TVS DIODE 24V 39.8V PLAD

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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