TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MASMLJ70AE3

MASMLJ70AE3

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO214AB

0

MXL15KP33AE3

MXL15KP33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 54.8V CASE 5A

0

MX15KP100AE3

MX15KP100AE3

Roving Networks / Microchip Technology

TVS DIODE 100V 162V CASE 5A

0

MXSMBJ24CAE3

MXSMBJ24CAE3

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V DO214AA

0

MA5KP10CA

MA5KP10CA

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO204AR

0

SMLJ78AE3/TR13

SMLJ78AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO214AB

0

MASMLJ14AE3

MASMLJ14AE3

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AB

0

MSMLJ14CAE3

MSMLJ14CAE3

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AB

0

MXLSMCJ120AE3

MXLSMCJ120AE3

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO214AB

0

MASMBJ10CAE3

MASMBJ10CAE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AA

0

SMCJ120E3/TR13

SMCJ120E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 120V 214V DO214AB

0

MXSMBJ70CA

MXSMBJ70CA

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO214AA

0

MASMBJ64CA

MASMBJ64CA

Roving Networks / Microchip Technology

TVS DIODE 64V 103V DO214AA

0

MXLSMBG8.5CAE3

MXLSMBG8.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO215AA

0

SMLJ5.0E3/TR13

SMLJ5.0E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 9.6V DO214AB

0

SMAJ48CE3/TR13

SMAJ48CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 48V 85.5V DO214AC

0

MXL5KP33CA

MXL5KP33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V CASE 5A

0

SMLJ36AE3/TR13

SMLJ36AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO214AB

0

MXLSMCJ30CA

MXLSMCJ30CA

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO214AB

0

MASMCJLCE15AE3

MASMCJLCE15AE3

Roving Networks / Microchip Technology

TVS DIODE 15V 24.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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