TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
JANTX1N6166A

JANTX1N6166A

Roving Networks / Microchip Technology

TVS DIODE 76V 137.6V C AXIAL

23

SMBJ58CAE3/TR13

SMBJ58CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AA

0

MXSMBJ15CA

MXSMBJ15CA

Roving Networks / Microchip Technology

TVS DIODE 15V 24.4V DO214AA

0

MPLAD15KP11CA

MPLAD15KP11CA

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V PLAD

0

MXSMBJSAC12

MXSMBJSAC12

Roving Networks / Microchip Technology

TVS DIODE 12V 19V DO214AA

0

MA5KP33AE3

MA5KP33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO204AR

0

MP4KE91CA

MP4KE91CA

Roving Networks / Microchip Technology

TVS DIODE 77.8V 125V DO204AL

0

JANTX1N6461

JANTX1N6461

Roving Networks / Microchip Technology

TVS DIODE 5VWM 9VC EAXIAL

174

MXSMLJ100CAE3

MXSMLJ100CAE3

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO214AB

0

MART100KP54AE3

MART100KP54AE3

Roving Networks / Microchip Technology

TVS DIODE 54V 106V CASE 5A

0

MASMCJ75CA

MASMCJ75CA

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AB

0

MXLP4KE75AE3

MXLP4KE75AE3

Roving Networks / Microchip Technology

TVS DIODE 64.1V 103V DO204AL

0

MXSMBG51A

MXSMBG51A

Roving Networks / Microchip Technology

TVS DIODE 51V 82.4V DO215AA

0

MART100KP100A

MART100KP100A

Roving Networks / Microchip Technology

TVS DIODE 100V 197V CASE 5A

0

MXLSMBJ7.5CA

MXLSMBJ7.5CA

Roving Networks / Microchip Technology

TVS DIODE 7.5V 12.9V DO214AA

0

MSMCG14AE3

MSMCG14AE3

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO215AB

0

MPLAD30KP200A

MPLAD30KP200A

Roving Networks / Microchip Technology

TVS DIODE 200V 322V PLAD

0

SMDA24C-4E3/TR7

SMDA24C-4E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

MASMCJ5.0CA

MASMCJ5.0CA

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V DO214AB

0

MAP4KE68CA

MAP4KE68CA

Roving Networks / Microchip Technology

TVS DIODE 58.1V 92V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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