TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MSMBG9.0AE3

MSMBG9.0AE3

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO215AA

65

MXLSMBG90CA

MXLSMBG90CA

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO215AA

0

MXSMLJ28CAE3

MXSMLJ28CAE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

0

MASMCJ17A

MASMCJ17A

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO214AB

0

MXSMLJ45AE3

MXSMLJ45AE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

MXRT100KP200AE3

MXRT100KP200AE3

Roving Networks / Microchip Technology

TVS DIODE 200V 392V CASE 5A

0

MXRT100KP58AE3

MXRT100KP58AE3

Roving Networks / Microchip Technology

TVS DIODE 58V 114V CASE 5A

0

MXSMBJ170CAE3

MXSMBJ170CAE3

Roving Networks / Microchip Technology

TVS DIODE 170V 275V DO214AA

0

MAP4KE82A

MAP4KE82A

Roving Networks / Microchip Technology

TVS DIODE 70.1V 113V DO204AL

0

JANTX1N6141A

JANTX1N6141A

Roving Networks / Microchip Technology

TVS DIODE 6.9V 13.4V C AXIAL

0

JANTXV1N6473

JANTXV1N6473

Roving Networks / Microchip Technology

TVS DIODE 24V 41.4V AXIAL

0

MASMBG40CA

MASMBG40CA

Roving Networks / Microchip Technology

TVS DIODE 40V 64.5V DO215AA

0

MASMCJ22A

MASMCJ22A

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO214AB

0

MX15KP51AE3

MX15KP51AE3

Roving Networks / Microchip Technology

TVS DIODE 51V 82.8V CASE 5A

0

MSMLJ120A

MSMLJ120A

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO214AB

0

SMDA12C-5/TR7

SMDA12C-5/TR7

Roving Networks / Microchip Technology

TVS DIODE 12V 24V 8SO

0

SMDA24C-4-2/TR7

SMDA24C-4-2/TR7

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

MRT100KP70AE3

MRT100KP70AE3

Roving Networks / Microchip Technology

TVS DIODE 70V 138V CASE 5A

0

MASMLJ22CAE3

MASMLJ22CAE3

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO214AB

0

MXL15KP60A

MXL15KP60A

Roving Networks / Microchip Technology

TVS DIODE 60V 97.3V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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