TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MSMCG120A

MSMCG120A

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO215AB

0

SMAJ250E3/TR13

SMAJ250E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 250V DO214AC

0

MASMLJ58CA

MASMLJ58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AB

0

MXLSMCJLCE8.5A

MXLSMCJLCE8.5A

Roving Networks / Microchip Technology

TVS DIODE 8.5V 14.4V DO214AB

0

MXSMCJ6.0A

MXSMCJ6.0A

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AB

0

USB50824CE3/TR13

USB50824CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 57V 8SO

0

MXLSMBJSAC6.0E3

MXLSMBJSAC6.0E3

Roving Networks / Microchip Technology

TVS DIODE 6V 11.2V DO214AA

0

MAP4KE13CA

MAP4KE13CA

Roving Networks / Microchip Technology

TVS DIODE 11.1V 18.2V DO204AL

0

MXLSMBG36CAE3

MXLSMBG36CAE3

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO215AA

0

MASMLJ100CAE3

MASMLJ100CAE3

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO214AB

0

MP4KE11AE3

MP4KE11AE3

Roving Networks / Microchip Technology

TVS DIODE 9.4V 15.6V DO204AL

0

MXLSMCJLCE8.0A

MXLSMCJLCE8.0A

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO214AB

0

MXLP4KE7.5A

MXLP4KE7.5A

Roving Networks / Microchip Technology

TVS DIODE 6.4V 11.3V DO204AL

0

MXSMCJ45CA

MXSMCJ45CA

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

SMAJ110CAE3/TR13

SMAJ110CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 110V 177V DO214AC

0

JANTXV1N6106AUS

JANTXV1N6106AUS

Roving Networks / Microchip Technology

TVS DIODE 7.6V 14.5V B SQ-MELF

0

MSMBJ22CA

MSMBJ22CA

Roving Networks / Microchip Technology

TVS DIODE 22V 35.5V DO214AA

0

MPLAD15KP24CAE3

MPLAD15KP24CAE3

Roving Networks / Microchip Technology

TVS DIODE 24V 38.9V PLAD

0

MSMLJ54CAE3

MSMLJ54CAE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AB

0

1N6464US

1N6464US

Roving Networks / Microchip Technology

TVS DIODE 15V 26.5V B SQ-MELF

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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