TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMAJ18CHR3G

SMAJ18CHR3G

TSC (Taiwan Semiconductor)

400W 22.2V 10% BIDIRECTIONAL TVS

3588

SMAJ78HR3G

SMAJ78HR3G

TSC (Taiwan Semiconductor)

400W 96.4V 10% UNIDIRECTIONAL TV

3600

1.5KE68A R0G

1.5KE68A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO201

0

SMF43A RVG

SMF43A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

5600

SMAJ17HR3G

SMAJ17HR3G

TSC (Taiwan Semiconductor)

400W 21V 10% UNIDIRECTIONAL TVS

3600

P6SMB68CAHM4G

P6SMB68CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO214AA

0

PGSMAJ54AHM2G

PGSMAJ54AHM2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SA18CA B0G

SA18CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 39.4V DO204AC

0

BZW06-33B R0G

BZW06-33B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 33.3V 69.7V DO204AC

0

SMAJ6.0AHM2G

SMAJ6.0AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 6V 10.3V DO214AC

0

BZW04-19 R1G

BZW04-19 R1G

TSC (Taiwan Semiconductor)

TVS DIODE 18.8V 30.6V DO204AL

0

BZW04-33 R1G

BZW04-33 R1G

TSC (Taiwan Semiconductor)

TVS DIODE 33.3V 53.9V DO204AL

0

SMBJ6.5CAHR5G

SMBJ6.5CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 6.5V 11.2V DO214AA

0

SMB10J9.0AHR5G

SMB10J9.0AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AA

0

SMBJ17CA M4G

SMBJ17CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.6V DO214AA

0

SMA6J13A M2G

SMA6J13A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 20.4V DO214AC

0

SMAJ48AHR3G

SMAJ48AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AC

3509

SA12A R0G

SA12A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO204AC

0

SMAJ150A R3G

SMAJ150A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 150V 243V DO214AC

0

1KSMB11CAHR5G

1KSMB11CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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