TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1KSMB24CA M4G

1KSMB24CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AA

0

P4KE13AHR0G

P4KE13AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO204AL

0

SA15AHR0G

SA15AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO204AC

0

SMAJ48CHR3G

SMAJ48CHR3G

TSC (Taiwan Semiconductor)

400W 59.3V 10% BIDIRECTIONAL TVS

3400

P4KE10A R0G

P4KE10A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO204AL

0

P6SMB6.8CAHM4G

P6SMB6.8CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO214AA

0

P4SMA180AHM2G

P4SMA180AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 154V 246V DO214AC

0

SMCJ24CA V6G

SMCJ24CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 38.9V DO214AB

0

BZW04-40B R1G

BZW04-40B R1G

TSC (Taiwan Semiconductor)

TVS DIODE 40.2V 64.8V DO204AL

0

P6KE75CA

P6KE75CA

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO15

4000

1.5KE130AHR0G

1.5KE130AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 111V 179V DO201

0

SMDJ30A V7G

SMDJ30A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AB

0

SMAJ40HR3G

SMAJ40HR3G

TSC (Taiwan Semiconductor)

400W 49.4V 10% UNIDIRECTIONAL TV

3600

BZW04-5V8 R0G

BZW04-5V8 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO204AL

0

P6KE13CAHR0G

P6KE13CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO204AC

0

P6KE400CAHR0G

P6KE400CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO204AC

0

SMAJ90CA R3G

SMAJ90CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 90V 146V DO214AC

0

SMCJ17AHR7G

SMCJ17AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.6V DO214AB

0

SMAJ15CA R3G

SMAJ15CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AC

2848

SA17AHR0G

SA17AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.7V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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