TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
5.0SMDJ51A M6G

5.0SMDJ51A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 51V 82.4V DO214AB

0

SMAJ5.0A R3G

SMAJ5.0A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 5V 9.2V DO214AC

0

P6KE11A A0G

P6KE11A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO204AC

0

SMBJ78CAHR5G

SMBJ78CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 126V DO214AA

0

SMBJ70A R5G

SMBJ70A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 70V 113V DO214AA

0

1.5KE100CA B0G

1.5KE100CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO201

0

SMBJ170A M4G

SMBJ170A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO214AA

0

1.5KE62CA R0G

1.5KE62CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO201

0

P4SMA82CA M2G

P4SMA82CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO214AC

0

1.5SMC36A R7G

1.5SMC36A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AB

0

BZW04-128HR0G

BZW04-128HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO204AL

0

SMB10J26A M4G

SMB10J26A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AA

0

BZW04-171B R0G

BZW04-171B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO204AL

0

P6SMB18CA R5G

P6SMB18CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO214AA

0

1.5SMC27A V7G

1.5SMC27A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO214AB

0

SA30AHR0G

SA30AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 64.3V DO204AC

0

SMB10J26CA M4G

SMB10J26CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AA

0

BZW04-17BHR0G

BZW04-17BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO204AL

0

BZW04-85HR0G

BZW04-85HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO204AL

0

SMCJ170A V7G

SMCJ170A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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