TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P6SMB110AHM4G

P6SMB110AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO214AA

0

SMAJ54AHM2G

SMAJ54AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AC

0

1.5KE75CA B0G

1.5KE75CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO201

0

BZW04-15 R0G

BZW04-15 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.2V DO204AL

0

P6SMB10AHM4G

P6SMB10AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO214AA

0

SA24CA R0G

SA24CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 50.1V DO204AC

0

SMB10J40AHR5G

SMB10J40AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 40V 64.5V DO214AA

195

1.5SMC36CA V7G

1.5SMC36CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AB

1675

P4SMA12A R3G

P4SMA12A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO214AC

0

P4KE39CAHR0G

P4KE39CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 33.3V 53.9V DO204AL

0

P6SMB24AHR5G

P6SMB24AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AA

0

1.5SMC33CA M6G

1.5SMC33CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AB

0

SA43CA A0G

SA43CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 43V 69.4V DO204AC

0

1.5KE10AHR0G

1.5KE10AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO201

0

SMBJ30AHR5G

SMBJ30AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AA

0

SMDJ26CA R7G

SMDJ26CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AB

0

BZW04-5V8B R1G

BZW04-5V8B R1G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO204AL

0

P6SMB6.8A R5G

P6SMB6.8A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO214AA

0

SMBJ10CA R5G

SMBJ10CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO214AA

0

BZW04-44BHR0G

BZW04-44BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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