TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMAJ9.0CA R3G

SMAJ9.0CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AC

0

SA48CAHR0G

SA48CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO204AC

0

SMBJ30CA M4G

SMBJ30CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AA

0

SMAJ160AHR3G

SMAJ160AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AC

3600

PGSMAJ40CAHE3G

PGSMAJ40CAHE3G

TSC (Taiwan Semiconductor)

DIODE, TVS, BIDIRECTIONAL

3553

SA16CA A0G

SA16CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 16V 26V DO204AC

0

BZW04-20HR0G

BZW04-20HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO204AL

0

SA36AHB0G

SA36AHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO204AC

0

SMDJ10CA R7G

SMDJ10CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO214AB

0

SMAJ16HR3G

SMAJ16HR3G

TSC (Taiwan Semiconductor)

400W 19.8V 10% UNIDIRECTIONAL TV

3590

SMCJ120CA V7G

SMCJ120CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 120V 193V DO214AB

0

P4KE22CAHR0G

P4KE22CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 18.8V 30.6V DO204AL

0

P6SMB30AHM4G

P6SMB30AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AA

0

PGSMAJ36AHR3G

PGSMAJ36AHR3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SMCJ120CA V6G

SMCJ120CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 120V 193V DO214AB

0

BZW04-9V4B R0G

BZW04-9V4B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO204AL

0

1KSMB24CAHM4G

1KSMB24CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AA

0

SA8.0CAHR0G

SA8.0CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 8V 13.6V DO204AC

0

1.5KE250A R0G

1.5KE250A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 214V 344V DO201

0

1KSMB51CAHR5G

1KSMB51CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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