TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMF11AHRQG

SMF11AHRQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

BZW04-23HR1G

BZW04-23HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO204AL

0

SMDJ11CAHR7G

SMDJ11CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 11V 18.2V DO214AB

0

SMDJ20AHR7G

SMDJ20AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 32.4V DO214AB

0

SA48A A0G

SA48A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO204AC

0

P6KE33A A0G

P6KE33A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO204AC

0

P4SMA30A M2G

P4SMA30A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AC

0

SMCJ45CA V6G

SMCJ45CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AB

0

SMDJ36CAHR7G

SMDJ36CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO214AB

0

SA43CA R0G

SA43CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 43V 69.4V DO204AC

0

1.5SMC12CA M6G

1.5SMC12CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO214AB

0

1V5KE400A

1V5KE400A

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO201AE

0

SMB10J15CAHM4G

SMB10J15CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AA

0

BZW04-145B R0G

BZW04-145B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 145V 234V DO204AL

0

SA22A A0G

SA22A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 46.6V DO204AC

0

SMAJ26CA R3G

SMAJ26CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AC

0

SMDJ36A V6G

SMDJ36A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO214AB

0

SMB10J28CAHR5G

SMB10J28CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AA

1436

SMF60AHRQG

SMF60AHRQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMCJ85CAHR7G

SMCJ85CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 85V 137V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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