TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SA12A A0G

SA12A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO204AC

0

BZW04-53B R0G

BZW04-53B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO204AL

0

SMCJ78A V7G

SMCJ78A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 126V DO214AB

0

P6KE200AHR0G

P6KE200AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO204AC

0

SA6.5CAHB0G

SA6.5CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 6.5V 11.2V DO204AC

0

P4SMA20CA M2G

P4SMA20CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AC

0

SMCJ6.5A R7G

SMCJ6.5A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 6.5V 11.2V DO214AB

0

1.5SMC9.1CA R7G

1.5SMC9.1CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO214AB

0

P6SMB9.1AHM4G

P6SMB9.1AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO214AA

0

1.5SMC56AHR7G

1.5SMC56AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO214AB

0

SMCJ45A V7G

SMCJ45A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AB

0

P6KE9.1A R0G

P6KE9.1A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AC

0

BZW04-58B R1G

BZW04-58B R1G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO204AL

0

1.5KE170CA R0G

1.5KE170CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 145V 234V DO201

0

PGSMAJ12A R3G

PGSMAJ12A R3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

3525

SMAJ120CHR3G

SMAJ120CHR3G

TSC (Taiwan Semiconductor)

400W 148V 10% BIDIRECTIONAL TVS

3600

SMBJ43CAHM4G

SMBJ43CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 43V 69.4V DO214AA

0

P6KE20CA R0G

P6KE20CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO204AC

0

SMCJ45A M6G

SMCJ45A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AB

0

BZW04-85BHR0G

BZW04-85BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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