TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1KSMB24AHM4G

1KSMB24AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AA

0

SMAJ75AHR3G

SMAJ75AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 75V 121V DO214AC

3590

PGSMAJ26A M2G

PGSMAJ26A M2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

1.5KE400AHA0G

1.5KE400AHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO201

0

1.5KE51CA R0G

1.5KE51CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO201

0

SA28CA R0G

SA28CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 59V DO204AC

0

SMCJ170CA R7G

SMCJ170CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO214AB

0

P6SMB82A M4G

P6SMB82A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO214AA

0

SMCJ78AHR7G

SMCJ78AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 126V DO214AB

0

SMCJ14CA M6G

SMCJ14CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AB

0

1.5SMC27A V6G

1.5SMC27A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO214AB

0

SMBJ6.0A R5G

SMBJ6.0A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 6V 10.3V DO214AA

0

SMCJ48A M6G

SMCJ48A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AB

0

P6KE150AHA0G

P6KE150AHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO204AC

0

P4KE13A R1G

P4KE13A R1G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO204AL

0

1.5SMC18A M6G

1.5SMC18A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO214AB

0

SMAJ22AHM2G

SMAJ22AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AC

0

SMA4S15AH

SMA4S15AH

TSC (Taiwan Semiconductor)

400W, 10V - 70V, SMD TVS PG STRU

6985

P4SMA18CAHM2G

P4SMA18CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO214AC

0

P4SMA20A R3G

P4SMA20A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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