TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
BZW04-85B R0G

BZW04-85B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO204AL

0

SMCJ64A R7G

SMCJ64A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 64V 103V DO214AB

0

SMBJ9.0AHR5G

SMBJ9.0AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AA

0

SA40AHB0G

SA40AHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 40V 64.5V DO204AC

0

P4SMA130A R3G

P4SMA130A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 111V 179V DO214AC

0

P4SMA27CA R3G

P4SMA27CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO214AC

4942

SA75A B0G

SA75A B0G

TSC (Taiwan Semiconductor)

TVS DIODE 75V 121V DO204AC

0

SMCJ18CA M6G

SMCJ18CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AB

0

1.5KE220CA A0G

1.5KE220CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 185V 328V DO201

0

1.5SMC43CA R7G

1.5SMC43CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 36.8V 59.3V DO214AB

0

BZW04-26 R1G

BZW04-26 R1G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.5V DO204AL

0

SMCJ30CA V7G

SMCJ30CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AB

1691

P6KE56CAHR0G

P6KE56CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO204AC

0

P4KE120A R0G

P4KE120A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 102V 165V DO204AL

0

SMF7.0A RVG

SMF7.0A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMDJ18A V6G

SMDJ18A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AB

0

SMAJ58CHR3G

SMAJ58CHR3G

TSC (Taiwan Semiconductor)

400W 71.6V 10% BIDIRECTIONAL TVS

3600

PGSMAJ24AHM2G

PGSMAJ24AHM2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SMDJ14CAHR7G

SMDJ14CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AB

0

SA48CAHB0G

SA48CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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