TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P4KE56A A0G

P4KE56A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO204AL

0

SMAJ75AHM2G

SMAJ75AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 75V 121V DO214AC

0

SA45AHA0G

SA45AHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO204AC

0

PGSMAJ11CA E3G

PGSMAJ11CA E3G

TSC (Taiwan Semiconductor)

DIODE, TVS, BIDIRECTIONAL

3230

1KSMB30A M4G

1KSMB30A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AA

0

1.5SMC51A V7G

1.5SMC51A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO214AB

0

SMAJ85A R3G

SMAJ85A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 85V 137V DO214AC

0

SMBJ22A M4G

SMBJ22A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AA

0

SA85A A0G

SA85A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 85V 137V DO204AC

0

P4SMA75A R3G

P4SMA75A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO214AC

0

BZW06-213 R0G

BZW06-213 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 213V 442V DO204AC

0

BZW04-7V8BHR0G

BZW04-7V8BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AL

0

P6KE100A A0G

P6KE100A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO204AC

0

SMA4S36AH

SMA4S36AH

TSC (Taiwan Semiconductor)

400W, 10V - 70V, SMD TVS PG STRU

6985

P6KE27A A0G

P6KE27A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO204AC

0

P6KE62AHB0G

P6KE62AHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO204AC

0

1.5SMC36A M6G

1.5SMC36A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AB

0

P4SMA56A M2G

P4SMA56A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO214AC

0

PGSMAJ33A R3G

PGSMAJ33A R3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

3480

P6KE24A A0G

P6KE24A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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