TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMB10J16CA M4G

SMB10J16CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 16V 26V DO214AA

0

BZW04-171 R1G

BZW04-171 R1G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO204AL

0

SMB10J17CA M4G

SMB10J17CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.6V DO214AA

0

SMF6.5A RVG

SMF6.5A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

4705

SMBJ160AHM4G

SMBJ160AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AA

0

BZW04-8V5BHR1G

BZW04-8V5BHR1G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO204AL

0

5.0SMDJ18AHM6G

5.0SMDJ18AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AB

0

SMDJ13AHR7G

SMDJ13AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 21.5V DO214AB

0

SMAJ36AHM2G

SMAJ36AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO214AC

0

P6SMB47A R5G

P6SMB47A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 40.2V 64.8V DO214AA

0

SMCJ45AHM6G

SMCJ45AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AB

0

P4KE47A A0G

P4KE47A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 40.2V 64.8V DO204AL

0

BZW04-19 R0G

BZW04-19 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 18.8V 30.6V DO204AL

0

P6SMB18AHR5G

P6SMB18AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO214AA

0

P4SMA120CA R3G

P4SMA120CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 102V 165V DO214AC

0

SMBJ60CAHR5G

SMBJ60CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 60V 96.8V DO214AA

3089

BZW04-128BHR0G

BZW04-128BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO204AL

0

SMBJ7.5AHR5G

SMBJ7.5AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 7.5V 12.9V DO214AA

0

BZW04-6V4 R1G

BZW04-6V4 R1G

TSC (Taiwan Semiconductor)

TVS DIODE 6.4V 11.3V DO204AL

0

1.5KE39AHA0G

1.5KE39AHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 33.3V 53.9V DO201

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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