TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SA17A R0G

SA17A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.7V DO204AC

0

BZW04-6V4HR0G

BZW04-6V4HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 6.4V 11.3V DO204AL

0

SMBJ54CAHM4G

SMBJ54CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AA

0

P4KE68CA R0G

P4KE68CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO204AL

0

BZW04-376B A0G

BZW04-376B A0G

TSC (Taiwan Semiconductor)

TVS DIODE 376V 603V DO204AL

0

P6SMB36CA R5G

P6SMB36CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AA

0

SMA4S12AH

SMA4S12AH

TSC (Taiwan Semiconductor)

400W, 10V - 70V, SMD TVS PG STRU

0

P4SMA170CAHR3G

P4SMA170CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 145V 234V DO214AC

0

SA45CAHA0G

SA45CAHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO204AC

0

SMCJ7.0A R7G

SMCJ7.0A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 7V 12V DO214AB

0

1.5KE20AHR0G

1.5KE20AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO201

0

1KSMB51CA M4G

1KSMB51CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO214AA

0

SMAJ28AHR3G

SMAJ28AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AC

3425

SMBJ110CA M4G

SMBJ110CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 110V 177V DO214AA

0

SMF54A RQG

SMF54A RQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMBJ60CA M4G

SMBJ60CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 60V 96.8V DO214AA

0

SA78CA R0G

SA78CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 126V DO204AC

0

SMCJ22CA R7G

SMCJ22CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AB

0

P6SMB15AHM4G

P6SMB15AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO214AA

0

P6SMB33CAHR5G

P6SMB33CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top