TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMDJ16A R7G

SMDJ16A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 16V 26V DO214AB

0

SMAJ160CAHR3G

SMAJ160CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AC

3600

SMAJ58HR3G

SMAJ58HR3G

TSC (Taiwan Semiconductor)

400W 71.6V 10% UNIDIRECTIONAL TV

3600

SMF15A RQG

SMF15A RQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMAJ12CAHM2G

SMAJ12CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AC

0

BZW04-342BHR0G

BZW04-342BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO204AL

0

SMB10J11CAHR5G

SMB10J11CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 11V 18.2V DO214AA

1650

SMAJ48A M2G

SMAJ48A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AC

0

1.5SMC68A R7G

1.5SMC68A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO214AB

0

BZW04-31 R1G

BZW04-31 R1G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO204AL

0

5.0SMDJ26AHM6G

5.0SMDJ26AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AB

0

1.5SMC68A M6G

1.5SMC68A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO214AB

0

P4KE36CAHR0G

P4KE36CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO204AL

0

SMAJ45CHR3G

SMAJ45CHR3G

TSC (Taiwan Semiconductor)

400W 55.6V 10% BIDIRECTIONAL TVS

3536

SMF7.0AHRQG

SMF7.0AHRQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMAJ51A M2G

SMAJ51A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 51V 82.4V DO214AC

0

SMA6S51AH

SMA6S51AH

TSC (Taiwan Semiconductor)

600W, 10V - 70V, SMD TVS PG STRU

6403

1.5SMC100CA V7G

1.5SMC100CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO214AB

0

SMBJ12A R5G

SMBJ12A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AA

1640

BZW04-14BHR0G

BZW04-14BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 13.6V 22.5V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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