TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P6SMB9.1CA R5G

P6SMB9.1CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO214AA

0

P4KE30A R0G

P4KE30A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO204AL

0

1.5KE18AHR0G

1.5KE18AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO201

0

SA20CAHR0G

SA20CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 43V DO204AC

0

SMBJ26AHR5G

SMBJ26AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AA

0

SA36A B0G

SA36A B0G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO204AC

0

SMBJ7.0CAHR5G

SMBJ7.0CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 7V 12V DO214AA

0

SMDJ28AHR7G

SMDJ28AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AB

0

SMF10A RVG

SMF10A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

5870

P4KE100AHR0G

P4KE100AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO204AL

0

BZW04-14B R1G

BZW04-14B R1G

TSC (Taiwan Semiconductor)

TVS DIODE 13.6V 22.5V DO204AL

0

1KSMB16A R5G

1KSMB16A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 13.6V 22.5V DO214AA

0

SMB10J26CAHR5G

SMB10J26CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AA

1384

SMAJ30CAHM2G

SMAJ30CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AC

0

P4KE20CAHR0G

P4KE20CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO204AL

0

SMCJ9.0A R7G

SMCJ9.0A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AB

0

1.5KE200A A0G

1.5KE200A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO201

0

SMB10J17CAHM4G

SMB10J17CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.6V DO214AA

0

SMAJ110AHM2G

SMAJ110AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 110V 177V DO214AC

0

5.0SMDJ20A M6G

5.0SMDJ20A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 32.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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