TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P6KE7.5A R0G

P6KE7.5A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 6.4V 11.3V DO204AC

0

SMBJ48CA R5G

SMBJ48CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AA

6773

P4KE120AHR0G

P4KE120AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 102V 165V DO204AL

0

SMAJ150CHR3G

SMAJ150CHR3G

TSC (Taiwan Semiconductor)

400W 185.5V 10% BIDIRECTIONAL TV

3600

P6KE24AHR0G

P6KE24AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO204AC

0

P6SMB56CA R5G

P6SMB56CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO214AA

0

P6SMB120A M4G

P6SMB120A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 102V 165V DO214AA

0

1KSMB13A R5G

1KSMB13A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO214AA

0

SMAJ100CA M2G

SMAJ100CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 100V 162V DO214AC

0

SMB10J20AHM4G

SMB10J20AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 32.4V DO214AA

0

P6KE11A R0G

P6KE11A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO204AC

0

SMAJ58CA R3G

SMAJ58CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 58V 93.6V DO214AC

0

P4KE62A R0G

P4KE62A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO204AL

0

SMAJ150CA R3G

SMAJ150CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 150V 243V DO214AC

0

BZW04-8V5BHR0G

BZW04-8V5BHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO204AL

0

SMCJ58AHR7G

SMCJ58AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 58V 93.6V DO214AB

0

SMB10J36AHM4G

SMB10J36AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO214AA

0

SMBJ43A M4G

SMBJ43A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 43V 69.4V DO214AA

0

SMB10J17CAHR5G

SMB10J17CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.6V DO214AA

1564

P6KE10AHR0G

P6KE10AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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