TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1V5KE160CA

1V5KE160CA

TSC (Taiwan Semiconductor)

TVS DIODE 136V 219V DO201AD

0

BZW04-19HR1G

BZW04-19HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 18.8V 30.6V DO204AL

0

1.5KE350AHR0G

1.5KE350AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 300V 482V DO201

0

P6KE160CAHR0G

P6KE160CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 136V 219V DO204AC

0

PGSMAJ13CA E3G

PGSMAJ13CA E3G

TSC (Taiwan Semiconductor)

DIODE, TVS, BIDIRECTIONAL

3500

BZW04-78HR0G

BZW04-78HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 125V DO204AL

0

SMCJ16CA M6G

SMCJ16CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 16V 26V DO214AB

0

P6KE120CA R0G

P6KE120CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 102V 165V DO204AC

0

SMAJ9.0CAHR3G

SMAJ9.0CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AC

3600

1.5KE250CAHR0G

1.5KE250CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 214V 344V DO201

0

1.5SMC8.2A R7G

1.5SMC8.2A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 7.02V 12.1V DO214AB

0

SMCJ22CAHM6G

SMCJ22CAHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AB

0

P4KE300CA R0G

P4KE300CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 256V 414V DO204AL

0

SMDJ28A V7G

SMDJ28A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AB

0

1.5SMC100CAHR7G

1.5SMC100CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO214AB

0

SMAJ90CAHM2G

SMAJ90CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 90V 146V DO214AC

0

SMA4S39AH

SMA4S39AH

TSC (Taiwan Semiconductor)

400W, 10V - 70V, SMD TVS PG STRU

0

SA51CAHA0G

SA51CAHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 51V 82.4V DO204AC

0

1KSMB43A M4G

1KSMB43A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 36.8V 59.3V DO214AA

0

P6KE150AHR0G

P6KE150AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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